| PART |
Description |
Maker |
| STB16N65M5 STD16N65M5 STP16N65M5 |
N-channel 650 V, 0.230 Ω, 12 A MDmesh?/a> V Power MOSFET in D2PAK, DPAK
N-channel 650 V, 0.230 Ω, 12 A MDmesh V Power MOSFET in D2PAK, DPAK
N-channel 650 V, 0.230 Ohm, 12 A MDmesh V Power MOSFET in DPAK, DPAK
|
STMicroelectronics
|
| FDPF20N50T |
N-Channel UniFETTM MOSFET 500V, 20A, 230 m
|
Fairchild Semiconductor
|
| BS108B |
230 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
DIODES INC
|
| IXTA230N075T2-7 |
230 A, 75 V, 0.0042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
|
IXYS CORP
|
| HMC816LP4E10 |
SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz
|
Hittite Microwave Corporation
Hittite Microwave Corpo...
|
| 0194280014 SD-19428-006 |
5.84mm (.230) Pitch MX150L
5.84mm (.230") Pitch MX150L??/a>
MOLEX Connector
|
Molex Electronics Ltd.
|
| AD5302 AD5302BRM AD5322 AD5322BRM AD5312 AD5312BRM |
2.5 V to 5.5 V, 230 uA Dual Rail-to-Rail, Voltage Output 8-/10-/12-Bit DACs SERIAL INPUT LOADING, 6 us SETTLING TIME, 8-BIT DAC, PDSO10
2.5 V to 5.5 V, 230 A, Dual Rail-to-Rail Voltage Output 8-Bit DAC in a 10-Lead MicroSOIC Package
|
Analog Devices, Inc.
AD[Analog Devices]
|
| PSMN9R5-100PS |
N-channel 100 V 9.6 m standard level MOSFET in T0220 89 A, 100 V, 0.0096 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
|
| NTD6600N NTD6600N-1 NTD6600N-1G NTD6600NT4 NTD6600 |
Power MOSFET 100 V, 12 A, N−Channel, Logic Level DPAK
Power MOSFET 100 V, 12 A, N-Channel, Logic Level DPAK; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Tape and Reel; Qty per Container: 2500 12 A, 100 V, 0.146 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| IRLZ24N-006 IRL530N-015PBF IRL530N-031PBF IRL2505- |
18 A, 55 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
15 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
104 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
120 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 100 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
39 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
61 A, 20 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
56 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
85 A, 20 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
24 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
27 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
41 A, 55 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 20 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
77 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc.
Vishay Intertechnology, Inc.
|
| STK350-230 |
STK350-230
|
Sanyo Semiconductor
|
| PPF150M |
N Channel MOSFET; Package: TO-254; ID (A): 21; RDS(on) (Ohms): 0.053; PD (W): 150; BVDSS (V): 100; Rq: 0.83; 34 A, 100 V, 0.053 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
|
